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| e PTB 20141 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 18 Watts, 1.465-1.513 GHz Class AB Characteristics 45% Min Collector Efficiency at 9 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25 20 15 10 5 0 0 VCC = 23 V ICQ = 50 mA f = 1.501 GHz 201 41 LOT COD E 1 2 3 4 5 Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 2.0 51.5 0.29 -40 to +150 3.5 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20141 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 40 mA, RBE = 22 VBE = 0 V, IC = 40 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 40 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA, f = 1.513 GHz) Collector Efficiency (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA, f = 1.513 GHz) Intermodulation Distortion (VCC = 23 Vdc, Pout = 9 W(PEP), ICQ = 50 mA, f1 = 1.500 GHz, f2 = 1.501 GHz) Load Mismatch Tolerance (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA, f = 1.513 GHz--all phase angles at frequency of test) Symbol Gpe C IMD Min 8.5 45 -- Typ -- -- -29 Max -- -- -- Units dB % dBc -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 23 Vdc, Pout = 9 W, ICQ = 50 mA) Z Source Z Load Frequency GHz 1.465 1.489 1.513 R 3.9 3.4 2.9 Z Source jX -5.6 -4.5 -3.4 R 3.1 3.0 2.9 Z Load jX -0.56 -0.39 -0.20 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20141 Uen Rev. D 09-28-98 2 |
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